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Same model may have multiple batches, images only for reference.
SGH23N60UFDTU Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

SGH23N60UFDTU

Part No SGH23N60UFDTU
Manufacturer Fairchild/ON Semiconductor
Catalog IGBTs - Single
Description IGBT 600V 23A 100W TO3P
Datasheet
SGH23N60UFDTU Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 23A
Pulsed Collector Current 92A
Collector-emitter saturation voltage(Max) 2.6V @ 15V, 12A
Maximum Power Dissipation 100W
Total Switching Energy(Ets) 115μJ (on), 135μJ (off)
Input Type Standard
Gate Charge 49nC
Turn-on and Turn-off delay time 17ns/60ns
Testing Conditions 300V, 12A, 23 Ohm, 15V
Reverse Recovery Time (trr) 60ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-3P
Win Source Part Number 1095592-SGH23N60UFDTU
Popularity Medium
Supply and Demand Status Balance
Quantity per package 30
Ultra Librarian 3D Model Ultra Librarian SGH23N60UFDTU CAD Model

Description

The Fairchild/ON Semiconductor SGH23N60UFDTU is a through-hole mounting IGBT transistor with a reverse recovery time of 60ns.

  • Reverse Recovery Time: 60ns
  • Mounting Type: Through-hole
  • IGBT Type: Not specified
  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Maximum Current Collector: 23A
  • Collector-Emitter Saturation Voltage: 2.6V @ 15V and 12A
  • Total Switching Energy: 115μJ (on) and 135μJ (off)
  • Turn-on and Turn-off Delay Time: 17ns/60ns
  • Package: TO-3P
  • Maximum Power Dissipation: 100W
  • Supply and Demand Status: Balanced
  • Quantity per Package: 30

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24+ $4.8244 $115.7856
38+ $4.6731 $177.5778
52+ $4.5230 $235.1960
67+ $4.3717 $292.9039
89+ $3.9201 $348.8889
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Availability: 12,700 pieces
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