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Same model may have multiple batches, images only for reference.
SSF7N60B
Same model may have multiple batches, images only for reference.

SSF7N60B

Part No SSF7N60B
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Fairchild/ON Semiconductor
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 2.7A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 25 V
Power Dissipation (Max) 86W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3PF
Package / Case TO-3P-3 Full Pack
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 340918-SSF7N60B
Ultra Librarian 3D Model Ultra Librarian SSF7N60B CAD Model

Description

The 340918-SSF7N60B is a N-Channel MOSFET transistor designed for use in discrete semiconductor products.

  • Drain to Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id) @ 25°C: 5.4A
  • Maximum On-Resistance (Rds On): 1.2Ohm @ 2.7A and 10V
  • Gate-Source Threshold Voltage (Vgs(th)): 4V @ 250μA
  • Maximum Power Dissipation: 86W
  • Package: TO-3P-3 Full Pack
  • Mounting: through-hole
  • Gate Charge (Qg) @ maximum gate-source voltage (Vgs): 50nC
  • Input Capacitance (Ciss) @ maximum drain-source voltage (Vds): 1800pF
  • Operating Temperature Range: -55°C to 150°C
  • Manufacturer: Fairchild/ON Semiconductor
  • Market Status: active

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