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Same model may have multiple batches, images only for reference.
SSR4N60BTF Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

SSR4N60BTF

Part No SSR4N60BTF
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET / N-Channel 600 V 2.8A (Tc) 2.5W (Ta), 49W (Tc) Surface Mount TO-252-3 (DPAK)
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Fairchild Semiconductor
Package Bulk
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.5Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 920 pF @ 25 V
Power Dissipation (Max) 2.5W (Ta), 49W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-252-3 (DPAK)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 2156-SSR4N60BTF,FAIFSCSSR4N60BTF
Standard Package 2,000
Win Source Part Number 1096325-SSR4N60BTF
Ultra Librarian 3D Model Ultra Librarian SSR4N60BTF CAD Model

Description

The Fairchild/ON Semiconductor SSR4N60BTF is a N-channel MOSFET transistor designed for use in discrete semiconductor products.

  • Drain to Source Voltage: 600V
  • Current Continuous Drain: 2.8A (Tc) @ 25°C
  • Maximum Rds On @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
  • Mounting: surface-mount technology
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supply and Demand Status: limited
  • Standard Package: 2,000

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