The MMBT651LT1 is a high-voltage NPN Bipolar Junction Transistor (BJT) manufactured by NXP Semiconductors (formerly Freescale). It is designed for high-voltage switching and amplifier applications, packaged in a small SOT-23 form factor.

Applications

• High-voltage switching circuits
• Amplifier circuits
• DC-DC converters
• LED drivers
• High-side switches

Features

• High collector-emitter breakdown voltage (VCEO = 400V)
• Low collector cutoff current
• High current gain (hFE)
• Small SOT-23 package

Benefits

• Suitable for high-voltage applications, providing a wide margin of safety.
• Minimal leakage current for efficient operation.
• Enables effective signal amplification.
• Space-saving design for compact electronic devices.

Additional Details

Technical Specifications:

• Collector-Emitter Voltage (VCEO): 400V
• Collector-Base Voltage (VCBO): 400V
• Emitter-Base Voltage (VEBO): 6V
• Collector Current (IC): 0.2A
• Power Dissipation (PD): 0.35W
• DC Current Gain (hFE): 25 - 100 (at IC = 1 mA, VCE = 10 V)
• Operating and Storage Junction Temperature Range: -55°C to +150°C

The MMBT651LT1 is particularly well-suited for applications requiring high voltage handling in a small form factor. Its high VCEO makes it a good choice for circuits where transient voltage spikes are a concern. The SOT-23 package allows for easy integration into modern surface mount designs.