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2DI100Z-120

Part No 2DI100Z-120
Manufacturer Fuji Electric
Catalog Hard To Find
Description POWER TRANSISTOR MODULE
Sample
Rohs State Need to verify
ECAD Module
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RoHS State Request Verification
Manufacturer Fuji Electric
Win Source Part Number 1123556-2DI100Z-120
Manufacturer Homepage www.fujielectric.co.jp/eng/fdt/scd
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2DI100Z-120 CAD Model

Description

The 2DI100Z-120 is an IGBT (Insulated Gate Bipolar Transistor) module manufactured by Fuji Electric. It is designed for high-power switching applications. The '2DI' likely indicates a dual configuration within the module. '100' signifies a current rating (e.g., 100 Amperes), and '120' potentially relates to the voltage rating (e.g., 1200V). IGBT modules like the 2DI100Z-120 are commonly used in inverters, motor drives, and other high-power electronic systems.

Applications

  • Industrial Inverters
  • AC and DC Motor Drives
  • Uninterruptible Power Supplies (UPS)
  • Welding Power Supplies
  • Traction Inverters (Electric Vehicles, Trains)

Features

  • High Blocking Voltage: Provides reliable operation in high-voltage environments.
  • Low Saturation Voltage (Vce(sat)): Minimizes power losses and improves efficiency.
  • Fast Switching Speed: Enables efficient operation at higher frequencies.
  • Short-Circuit Withstand Capability: Protects the module from damage during short-circuit events.
  • Isolated Baseplate: Simplifies thermal management and provides electrical isolation.

Benefits

  • High efficiency in power conversion applications.
  • Reduced heat generation.
  • Enhanced system reliability and robustness.
  • Simplified system design.
  • Improved power density.

Technical Specifications (General - May Vary Based on Specific Variant)

Specific technical details for the 2DI100Z-120 can be found in the Fuji Electric datasheet. However, typical specifications for similar IGBT modules include:

  • Collector-Emitter Voltage (Vces): 1200V.
  • Collector Current (Ic): 100A.
  • Gate-Emitter Voltage (Vges): Typically +/- 20V.
  • Saturation Voltage (Vce(sat)): Typically around 2-3V.
  • Switching Frequency: May range up to several kHz, depending on specific design conditions.

Always refer to the official Fuji Electric datasheet for the 2DI100Z-120 IGBT module for precise electrical characteristics, thermal performance data, and application guidelines. The datasheet will provide the most reliable information for ensuring optimal performance and safe operation.

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