The FMV10N80ESC-P is an 800V, 10A N-channel Super J-MOS series MOSFET from Fuji Electric. This power MOSFET is designed for high-voltage, high-speed switching applications, offering excellent performance and efficiency. It incorporates advanced device technology to minimize on-resistance and gate charge, leading to reduced power losses and improved overall system performance.

Applications

• Power Factor Correction (PFC) circuits
• Uninterruptible Power Supplies (UPS)
• Switch Mode Power Supplies (SMPS)
• High-voltage DC-DC converters
• Motor control circuits
• Lighting applications (e.g., LED lighting)

Features

• High Voltage Capability: 800V Drain-Source voltage (VDS)
• Low On-Resistance: Minimizes conduction losses
• Fast Switching Speed: Reduces switching losses
• Avalanche Ruggedness: High avalanche energy rating for improved reliability
• Integrated Gate Resistor: Simplifies gate drive circuit design
• RoHS Compliant: Environmentally friendly

Benefits

• Increased Efficiency: Lower on-resistance and faster switching speeds reduce power losses, leading to higher efficiency in power conversion applications.
• Improved Reliability: High avalanche energy rating provides robustness against voltage transients, enhancing overall system reliability.
• Simplified Design: Integrated gate resistor simplifies gate drive circuit design and reduces external component count.
• Compact Design: Allows for smaller and more compact power supply designs due to its high power density.
• Thermal Performance: Excellent thermal characteristics contribute to efficient heat dissipation.

Additional Details

The FMV10N80ESC-P is typically available in a through-hole package, such as TO-220 or similar. It is designed for ease of use and integration into various power electronic circuits. Its key electrical parameters include a gate threshold voltage (VGS(th)) of typically 3V, a drain current (ID) of 10A, and a total gate charge (Qg) that is optimized for fast switching performance. The device's maximum junction temperature is typically 150°C, ensuring safe operation under high power conditions.

This MOSFET is a suitable choice for designers looking for a robust and efficient power switching device for high-voltage applications. Its combination of high voltage capability, low on-resistance, and fast switching speed makes it an excellent option for demanding power electronic designs.