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FMV20N50ES

Part No FMV20N50ES
Manufacturer Fuji Electric
Catalog OEM Parts (F - I)
Sample
Rohs State Need to verify
ECAD Module
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Win Source Part Number 1059513-FMV20N50ES
Categories OEM Parts(F-I)
Manufacturer Fuji Electric
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian FMV20N50ES CAD Model

Description

The FMV20N50ES is an N-channel power MOSFET manufactured by Fuji Electric. This MOSFET is designed for high-efficiency switching applications. It features a low on-resistance and fast switching speeds, making it suitable for various power conversion systems.

Applications:

  • Power Supplies: Used in switched-mode power supplies (SMPS) for various electronic devices.
  • Motor Drives: Employed in motor control circuits for industrial and consumer applications.
  • Inverters: Utilized in solar inverters and uninterruptible power supplies (UPS).
  • Lighting Ballasts: Used in electronic ballasts for fluorescent and LED lighting systems.
  • DC-DC Converters: Applied in DC-DC converters for voltage regulation and power management.

Features:

  • Low On-Resistance (RDS(on)): Reduces conduction losses, improving overall efficiency.
  • Fast Switching Speed: Minimizes switching losses, enabling higher operating frequencies.
  • High Avalanche Energy: Provides robustness against transient voltage spikes.
  • High Voltage Capability: Designed for high-voltage applications.
  • RoHS Compliant: Meets environmental standards for hazardous substances.

Benefits:

  • High Efficiency: Low RDS(on) and fast switching reduce power losses.
  • Improved Reliability: High avalanche energy ensures robust performance under stress.
  • Simplified System Design: Easy to drive and control.
  • Reduced System Size: High-frequency operation allows for smaller passive components.

Additional Details:

The FMV20N50ES typically features a drain-source voltage (VDS) of 500V and a continuous drain current (ID) of 20A. It is available in a TO-220 package. The device incorporates gate charge and reverse recovery characteristics optimized for efficient switching performance. The MOSFET is suitable for hard-switching and soft-switching topologies.

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