The FMZ16N55G is an N-channel Power MOSFET from Fuji Electric, designed for efficient power switching applications. This MOSFET features a high breakdown voltage and a low on-resistance to minimize power loss and improve overall system performance.

Applications:

• Switch-mode power supplies (SMPS): Commonly used in power supplies for various electronic devices, including computer power supplies.
• Uninterruptible power supplies (UPS): Integrated into UPS systems for providing backup power during power outages.
• Motor control: Used in motor control applications to regulate the speed and torque of electric motors.
• Inverters: Employed in inverter circuits to convert DC power to AC power.
• Lighting: Found in LED drivers for efficient and reliable lighting solutions.

Features:

• High breakdown voltage: Offers a 550V breakdown voltage, suitable for high-voltage applications.
• Low on-resistance: Reduces conduction losses and improves efficiency.
• Fast switching speed: Enables high-frequency operation.
• Avalanche rated: Provides robustness against avalanche breakdown.
• Lead-free package: Complies with environmental standards.

Benefits:

• High efficiency: Minimizes power losses, resulting in high energy efficiency.
• Improved reliability: Provides reliable operation in demanding applications.
• Reduced heat generation: Low on-resistance reduces heat generation.
• Simplified circuit design: Simplifies the design of power electronic circuits.
• Environmentally friendly: Compliant with lead-free environmental standards.

Technical Specifications:

Typical specifications include (always confirm with the datasheet):

• Drain-Source Voltage (Vds): 550V
• Gate-Source Voltage (Vgs): ±30V
• Continuous Drain Current (Id): 16A (at 25°C)
• Pulsed Drain Current (Idm): 48A
• On-Resistance (Rds(on)): 0.29 Ω (typical)
• Total Gate Charge (Qg): 30 nC (typical)
• Operating Temperature: -55°C to +150°C

Disclaimer: Always consult the official Fuji Electric datasheet for the most accurate and up-to-date specifications.