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25P06

Part No 25P06
Manufacturer Goford Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description P60V,RD(MAX)<45M@-10V,VTH2V~3V T
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Goford Semiconductor
Series -
Package Tape & Reel
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 45mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 37 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3384 pF @ 30 V
FET Feature -
Power Dissipation (Max) 100W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1377430-25P06
Ultra Librarian 3D Model Ultra Librarian 25P06 CAD Model

Description

The 25P06 is a P-Channel MOSFET transistor manufactured by Goford Semiconductor.

  • Device Function: Transistor, FET
  • Device Type: MOSFET P-Channel
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Mounting Type: Surface Mount
  • Vdss - Drain to Source Voltage: 60V
  • Id - Continuous Drain Current @ 25°C: 25A
  • Rds On - On-Resistance: 45mOhm @ 12A, 10V
  • Qg - Gate Charge: 37nC @ 10V
  • Vgs - Gate-Source Voltage: ±20V
  • Power Dissipation: 100W
  • Operating Temperature: -55°C ~ 150°C
  • RoHS: Yes

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Pricing & Ordering

Quantity Unit Price Ext. Price
135+ $0.3730 $50.3550
330+ $0.3061 $101.0130
510+ $0.2965 $151.2150
700+ $0.2870 $200.9000
905+ $0.2774 $251.0470
1,210+ $0.2487 $300.9270
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,390 pieces
MOQ: 135 pcs
Order Increment : 1 pcs
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