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60N06

Name: 60N06
Brand: Goford Semiconductor
SKU: 1377542
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	60N06
Manufacturer	Goford Semiconductor
Catalog	Transistors - FETs, MOSFETs - RF
Description	N60V,RD(MAX)<17M@10V,RD(MAX)<21M
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr	Goford Semiconductor
Series	-
Package	Tape & Reel
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	50A
Rds On (Max) @ Id, Vgs	17mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	50 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2050 pF @ 30 V
Power Dissipation (Max)	85W
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252 (DPAK)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
MSL Level	3 (168 Hours)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	1377542-60N06
Package	Cut Tape (CT)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	17mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	50 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2315 pF @ 30 V
Power Dissipation (Max)	69W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Mounting Type	Surface Mount
Supplier Device Package	TO-252
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Ultra Librarian 3D Model	Ultra Librarian 60N06 CAD Model

Alternative Products

Description

The 60N06 is a N-Channel MOSFET transistor from Goford Semiconductor. Goford Semiconductor manufactures the 60N06.

Channel Type: N-Channel
Package/Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain to Source Voltage (Vdss): 60V
Continuous Drain Current (Id): 50A @ 25°C
On-Resistance (Rds On): 17mOhm @ 5A and 10V
Gate Threshold Voltage (Vgs(th)): 2V @ 250µA
Gate Charge (Qg): 50nC @ 10V
Gate Voltage Swing (Vgs): ±20V
Input Capacitance (Ciss): 2050pF @ 30V

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