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Same model may have multiple batches, images only for reference.
G2014
Same model may have multiple batches, images only for reference.

G2014

Part No G2014
Manufacturer Goford Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N20V,RD(MAX)<[email protected],RD(MAX)<11M
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Goford Semiconductor
Series -
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) @ Id, Vgs 7mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17.5 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 1710 pF @ 10 V
FET Feature -
Power Dissipation (Max) 3W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-DFN (2x2)
Package / Case 6-WDFN Exposed Pad
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1376918-G2014
Ultra Librarian 3D Model Ultra Librarian G2014 CAD Model

Description

The G2014 is a single N-channel MOSFET transistor manufactured by Goford Semiconductor.

  • Package: 6-WDFN Exposed Pad
  • Mounting Type: Surface Mount
  • Vdss: 20V
  • Id @ 25°C: 14A
  • Drive Voltage (Max Rds On): 2.5V
  • Drive Voltage (Min Rds On): 10V
  • Rds On: 7mOhm @ 5A, 10V
  • Vgs(th) @ 250μA: 900mV
  • Qg @ 4.5V: 17.5nC
  • Vgs (Max): ±12V
  • Ciss @ 10V: 1710pF

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Pricing & Ordering

Quantity Unit Price Ext. Price
625+ $0.0800 $50.0000
1,525+ $0.0657 $100.1925
2,360+ $0.0636 $150.0960
3,250+ $0.0616 $200.2000
4,205+ $0.0595 $250.1975
5,620+ $0.0534 $300.1080
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 25,110 pieces
MOQ: 625 pcs
Order Increment : 1 pcs
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