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Same model may have multiple batches, images only for reference.
G20N06D52
Same model may have multiple batches, images only for reference.

G20N06D52

Part No G20N06D52
Manufacturer Goford Semiconductor
Catalog FETs - Arrays
Description N60V,RD(MAX)<30M@10V,RD(MAX)<40M
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Goford Semiconductor
Series -
Package Tape & Reel
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature -
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 20A (Ta)
Rds On (Max) @ Id, Vgs 30mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1220pF @ 30V
Power - Max 45W (Ta)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Supplier Device Package 8-DFN (4.9x5.75)
Base Product Number G20N
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1376811-G20N06D52
Ultra Librarian 3D Model Ultra Librarian G20N06D52 CAD Model

Description

The 1376811-G20N06D52 is a MOSFET transistor array from Goford Semiconductor.

  • Category: Discrete Semiconductor Products, FETs and MOSFETs
  • Package: 8-PowerTDFN
  • Mounting Type: Surface Mount
  • Vdss: 60V
  • Id: 20A @ 25°C
  • Rds On: 30mOhm @ 20A and 10V
  • Vgs: ±20V
  • Qg: 25nC @ 10V
  • Power Dissipation: 45W
  • Operating Temperature: -55°C to 175°C
  • Product Status: Active
  • REACH: Unaffected

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840+ $0.1792 $150.5280
1,205+ $0.1666 $200.7530
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1,950+ $0.1541 $300.4950
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