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G3035L

Part No G3035L
Manufacturer Goford Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description P30V,RD(MAX)<59M@-10V,RD(MAX)<75
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Goford Semiconductor
Series -
Package Tape & Reel
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 4.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 59mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 650 pF @ 15 V
FET Feature -
Power Dissipation (Max) 1.4W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1376820-G3035L
Ultra Librarian 3D Model Ultra Librarian G3035L CAD Model

Description

The G3035L is a single P-channel MOSFET transistor manufactured by Goford Semiconductor.

  • Package: TO-236-3, SC-59, SOT-23-3
  • Mounting Type: Surface Mount
  • Drain to Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 4.1A @ 25°C
  • Drive Voltage (Rds On): 4.5V (Max Rds On), 10V (Min Rds On)
  • Rds On: 59mOhm @ 2.1A, 10V
  • Gate Threshold Voltage (Vgs(th)): 2V @ 250μA
  • Gate Charge (Qg): 12.5nC @ 10V
  • Maximum Vgs: ±20V
  • Input Capacitance (Ciss): 650pF @ 15V

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,320+ $0.0380 $50.1600
3,210+ $0.0312 $100.1520
4,970+ $0.0302 $150.0940
6,850+ $0.0292 $200.0200
8,870+ $0.0282 $250.1340
11,860+ $0.0253 $300.0580
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 930 pieces
MOQ: 1320 pcs
Order Increment : 1 pcs
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