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Same model may have multiple batches, images only for reference.
GT100N04D3
Same model may have multiple batches, images only for reference.

GT100N04D3

Part No GT100N04D3
Manufacturer Goford Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N40V, 13A,RD<10M@10V,VTH1.0V~2.5
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Goford Semiconductor
Series -
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 642 pF @ 20 V
FET Feature -
Power Dissipation (Max) 23W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-DFN (3.15x3.05)
Package / Case 8-PowerVDFN
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0000
Win Source Part Number 1376884-GT100N04D3
Ultra Librarian 3D Model Ultra Librarian GT100N04D3 CAD Model

Description

The GT100N04D3 is a single N-channel MOSFET transistor manufactured by Goford Semiconductor.

  • Package / Case: 8-PowerVDFN
  • Mounting Type: Surface Mount
  • Vdss (Drain to Source Voltage): 40V
  • Id (Continuous Drain Current) @ 25°C: 13A
  • Drive Voltage (Max Rds On): 4.5V
  • Drive Voltage (Min Rds On): 10V
  • Rds On @ 5A, 10V: 10mOhm
  • Vgs(th) (Gate Threshold Voltage) @ 250μA: 2.5V
  • Qg (Gate Charge) @ 10V: 32nC
  • Vgs (Max): ±20V
  • Ciss (Input Capacitance) @ 20V: 642pF

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