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Same model may have multiple batches, images only for reference.
2N5671 Real Image
Same model may have multiple batches, images only for reference.

2N5671

Part No 2N5671
Manufacturer Harris Corporation
Catalog Transistors (BJT) - Single
Description TRANS NPN 90V 30A TO3
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Harris Corporation
Package Bulk
Product Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 30 A
Voltage - Collector Emitter Breakdown (Max) 90 V
Vce Saturation (Max) @ Ib, Ic 5V @ 6A, 30A
Current - Collector Cutoff (Max) 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 20A, 5V
Power - Max 6 W
Temperature Range - Operating -65°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case TO-204AA, TO-3
Supplier Device Package TO-3
Base Product Number 2N5671
Standard Package 5 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0075
Win Source Part Number 541310-2N5671
Ultra Librarian 3D Model Ultra Librarian 2N5671 CAD Model

Description

The 541310-2N5671 is a single bipolar transistor from Harris Corporation, designed for use in discrete semiconductor products.

  • Transistor Type: NPN
  • Power Rating: 6W
  • Collector-Emitter Voltage: 90V
  • Maximum Collector Current: 30A
  • Vce Saturation: 5V @ 6A and 30A
  • Maximum Collector Cutoff Current: 10mA
  • Minimum DC Current Gain: 20 @ 20A and 5V
  • Mounting Type: Through-Hole
  • Package: TO-204AA and TO-3
  • Operating Temperature: -65°C to 200°C
  • Status: Active

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