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Same model may have multiple batches, images only for reference.
HFA3127MJ/883 Real Image
Same model may have multiple batches, images only for reference.

HFA3127MJ/883

Part No HFA3127MJ/883
Manufacturer Harris Corporation
Catalog RF Transistors (BJT)
Description DUAL MARKED (5962-9474901MEA)
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors
Mfr Harris Corporation
Package Bulk
Product Status Active
Transistor Type 5 NPN
Voltage - Collector Emitter Breakdown (Max) 12V
Frequency - Transition 8GHz
Noise Figure (dB Typ @ f) 3.5dB @ 1GHz
Power - Max 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 10mA, 2V
Current - Collector (Ic) (Max) 65mA
Temperature Range - Operating -55°C ~ 125°C (TJ)
Mounting Type Through Hole
Package / Case 16-CDIP (0.300", 7.62mm)
Supplier Device Package 16-CERDIP
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 0000.00.0000
Win Source Part Number 597473-HFA3127MJ/883
Ultra Librarian 3D Model Ultra Librarian HFA3127MJ/883 CAD Model

Description

The 597473-HFA3127MJ/883 is a bipolar RF transistor designed for high-frequency applications.

  • Manufacturer: Harris Corporation
  • Maximum Power Dissipation: 150mW
  • Maximum Collector-Emitter Breakdown Voltage: 12V
  • Maximum Collector Current: 65mA
  • DC Current Gain: 40 @ 10mA and 2V
  • Frequency Transition: 8GHz
  • Noise Figure: 3.5dB @ 1GHz
  • Package: 16-CDIP
  • Operating Temperature: -55°C to 125°C
  • Component Type: Active
  • Commonly Used in: RF applications

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