The 145270-HGT1S7N60B3DS is a single IGBT (Insulated Gate Bipolar Transistor) designed for high power applications. It is part of the Transistors - IGBTs - Single IGBTs category of electronic components. This IGBT has a maximum power rating of 60W and a reverse recovery time of 37ns. It has a collector-emitter breakdown voltage of 600V and a maximum collector current of 14A. The 145270-HGT1S7N60B3DS has a switching energy of 160µJ (on) and 120µJ (off). It is surface mountable and comes in a TO-263-3, D²Pak package. It is manufactured by Harris Corporation and is currently an active product in their lineup.