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HGTG24N60D1 Intersil Corporation
Same model may have multiple batches, images only for reference.

HGTG24N60D1

Part No HGTG24N60D1
Manufacturer Harris Corporation
Catalog IGBTs - Single
Description UFS SERIES N-CHANNEL IGBT
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Harris Corporation
Package Bulk
Product Status Active
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 40 A
Current - Collector Pulsed (Icm) 96 A
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 24A
Power - Max 125 W
Input Type Standard
Gate Charge 155 nC
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247
Standard Package 34 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 597679-HGTG24N60D1
Ultra Librarian 3D Model Ultra Librarian HGTG24N60D1 CAD Model

Description

The HGTG24N60D1 is a single IGBT (Insulated Gate Bipolar Transistor) from Harris Corporation.

  • Application: Designed for high-power applications
  • Maximum Power: 125W
  • Voltage Breakdown: 600V
  • Maximum Collector Current: 40A
  • On-State Voltage: Low
  • Gate Charge: 155nC
  • Package: Through-hole
  • Temperature Range: -55°C to 150°C

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