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HGTG24N60D1D Intersil Corporation
Same model may have multiple batches, images only for reference.

HGTG24N60D1D

Part No HGTG24N60D1D
Manufacturer Harris Corporation
Catalog IGBTs - Single
Description UFS SERIES N-CHANNEL IGBT
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Harris Corporation
Package Bulk
Product Status Active
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 40 A
Current - Collector Pulsed (Icm) 96 A
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 24A
Power - Max 125 W
Input Type Standard
Gate Charge 155 nC
Reverse Recovery Time (trr) 60 ns
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 597680-HGTG24N60D1D
Ultra Librarian 3D Model Ultra Librarian HGTG24N60D1D CAD Model

Description

The 597680-HGTG24N60D1D is a single IGBT (Insulated Gate Bipolar Transistor) designed for high-power switching applications. Manufactured by Harris Corporation, this IGBT offers reliable performance and robust construction.

  • Package: Bulk
  • Standard Package: 1 piece
  • Maximum Power Rating: 125W
  • Reverse Recovery Time (trr): 60ns
  • Collector-Emitter Breakdown Voltage: 600V
  • Maximum Collector Current: 40A
  • Vce(on) (Max): 2.3V @ Vge of 15V and Ic of 24A
  • Gate Charge: 155nC

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $15.6306 $78.1530
11+ $12.8260 $141.0860
16+ $12.4251 $198.8016
22+ $12.0240 $264.5280
28+ $11.6230 $325.4440
38+ $10.4213 $396.0094
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,700 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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