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Same model may have multiple batches, images only for reference.
HGTP10N40C1D
Same model may have multiple batches, images only for reference.

HGTP10N40C1D

Part No HGTP10N40C1D
Manufacturer Harris Corporation
Catalog IGBTs - Single
Description 17.5A, 400V, N-CHANNEL IGBT / IGBT 400 V 17.5 A 75 W Through Hole TO-220
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr Harris Corporation
Package Bulk
Voltage - Collector Emitter Breakdown (Max) 400 V
Current - Collector (Ic) (Max) 17.5 A
Vce(on) (Max) @ Vge, Ic 3.2V @ 20V, 17.5A
Power - Max 75 W
Input Type Standard
Gate Charge 19 nC
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220
RoHS Status RoHS non-compliant
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Other Names HARHARHGTP10N40C1D,2156-HGTP10N40C1D
Standard Package 1
Win Source Part Number 1062784-HGTP10N40C1D
Ultra Librarian 3D Model Ultra Librarian HGTP10N40C1D CAD Model

Description

Harris Corporation HGTP10N40C1D is a TO-220-3 packaged Discrete Semiconductor Products>Transistors - IGBTs - Single component with a maximum power of 75W.

  • Voltage Collector Emitter Breakdown: 400V
  • Current Collector: 17.5A
  • Supply: It is in short supply
  • Operating Temperature Range: -55°C to 150°C (TJ)

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