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Same model may have multiple batches, images only for reference.
HUF76137S3S Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

HUF76137S3S

Part No HUF76137S3S
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 72 nC @ 10 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 2100 pF @ 25 V
Power Dissipation (Max) 145W (Tc)
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 149031-HUF76137S3S
Ultra Librarian 3D Model Ultra Librarian HUF76137S3S CAD Model

Description

The HUF76137S3S is a single N-channel MOSFET transistor designed for discrete semiconductor applications.

  • Drain to Source Voltage: 30V
  • Continuous Drain Current: 75A
  • On-Resistance: 9mOhm at 75A and 10V
  • Mounting Type: Surface Mount
  • Package: TO-263-3
  • Gate Charge: 72nC at 10V
  • Input Capacitance: 2100pF at 25V
  • Manufacturer: Harris Corporation

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