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Same model may have multiple batches, images only for reference.
IRF611 Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

IRF611

Part No IRF611
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 1.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.2 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 135 pF @ 25 V
Power Dissipation (Max) 43W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Standard Package 405 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 604390-IRF611
Ultra Librarian 3D Model Ultra Librarian IRF611 CAD Model

Description

The 604390-IRF611 is a single N-channel MOSFET designed for discrete semiconductor applications.

  • Mounting Type: Through-Hole
  • Package: TO-220-3
  • Supplier Device Package: TO-220AB
  • Manufacturer: Harris Corporation
  • Status: Active
  • Power Dissipation (Max): 43W
  • Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
155+ $0.3290 $50.9950
375+ $0.2700 $101.2500
575+ $0.2616 $150.4200
795+ $0.2531 $201.2145
1,025+ $0.2447 $250.8175
1,370+ $0.2194 $300.5780
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,400 pieces
MOQ: 155 pcs
Order Increment : 1 pcs
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