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IRF9633

Part No IRF9633
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description P-CHANNEL POWER MOSFET
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 550 pF @ 25 V
Power Dissipation (Max) 75W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Standard Package 275 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 604770-IRF9633
Ultra Librarian 3D Model Ultra Librarian IRF9633 CAD Model

Description

The 604770-IRF9633 is a P-Channel MOSFET transistor designed for use in discrete semiconductor products and manufactured by Harris Corporation.

  • Vdss: 150 V
  • Id: 5.5A @ 25°C
  • Rds On (Max): 1.2 Ohm @ 3.5A and 10V
  • Qg: 45 nC @ 10V
  • Temperature Range: -55°C to 150°C
  • Power Dissipation: 75W
  • Package: TO-220-3
  • Mounting: through-hole
  • Status: active

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