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Same model may have multiple batches, images only for reference.
RF1S25N06 Real Image
Same model may have multiple batches, images only for reference.

RF1S25N06

Part No RF1S25N06
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description 25A, 60V, 0.047 OHM, N-CHANNEL P
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 47mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 20 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 975 pF @ 25 V
Power Dissipation (Max) 72W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK (TO-262)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Standard Package 1 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 293208-RF1S25N06
Ultra Librarian 3D Model Ultra Librarian RF1S25N06 CAD Model

Description

The 293208-RF1S25N06 is a single N-Channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) designed for discrete semiconductor applications.

  • Manufacturer: Harris Corporation
  • Application: MOSFETs for power management and control.
  • Package: Bulk
  • Package Type: TO-262-3 Long Leads, I²Pak package
  • Mounting Type: Through hole
  • Vdss: 60V
  • Id: 25A
  • Rds On (Max) @ Id, Vgs: 47mOhm @ 25A, 10V
  • Gate Charge (Qg): 80nC
  • Input Capacitance (Ciss): 975pF
  • Operating Temperature: -55°C to 175°C
  • Status: Active product
  • Usage: Widely used in various applications that require N-Channel MOSFETs.

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14+ $8.7861 $123.0054
21+ $8.5124 $178.7604
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37+ $7.9626 $294.6162
49+ $7.1391 $349.8159
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