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Same model may have multiple batches, images only for reference.
RF1S45N06LE Real Image
Same model may have multiple batches, images only for reference.

RF1S45N06LE

Part No RF1S45N06LE
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description 45A, 60V, 0.028OHM, N-CHANNEL,
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 28mOhm @ 45A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 135 nC @ 10 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 2150 pF @ 25 V
Power Dissipation (Max) 142W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK (TO-262)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Standard Package 310 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 0000.00.0000
Win Source Part Number 931961-RF1S45N06LE
Ultra Librarian 3D Model Ultra Librarian RF1S45N06LE CAD Model

Description

The RF1S45N06LE is an N-channel MOSFET designed for use in various electronic applications from Harris Corporation.

  • Channel Type: N-Channel
  • Voltage Rating: 60V
  • Continuous Drain Current: 45A
  • On-Resistance: 28mOhm @ 45A and 5V
  • Gate Threshold Voltage: 2V
  • Power Dissipation: 142W (max)
  • Package: TO-262-3
  • Supply: Bulk
  • Product Status: Active

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