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RF1S9540

Part No RF1S9540
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description P-CHANNEL POWER MOSFETS
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 200mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 90 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 25 V
Power Dissipation (Max) 150W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK (TO-262)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 0000.00.0000
Win Source Part Number 659828-RF1S9540
Ultra Librarian 3D Model Ultra Librarian RF1S9540 CAD Model

Description

The 659828-RF1S9540 is a P-channel MOSFET transistor designed for high power applications.

  • Drain-to-Source Voltage: 100 V
  • Continuous Drain Current: 19A @ 25°C
  • Maximum On-Resistance: 200mOhm @ 10A and 10V
  • Gate Threshold Voltage: 4V @ 250µA
  • Maximum Power Dissipation: 150W
  • Package: TO-262-3
  • Mounting: through-hole
  • Status: active
  • Manufacturer: Harris Corporation
  • Ideal for: power switching applications where low on-resistance, high power handling, and precise control are required

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Pricing & Ordering

Quantity Unit Price Ext. Price
15+ $3.9256 $58.8840
36+ $3.2211 $115.9596
56+ $3.1205 $174.7480
77+ $3.0198 $232.5246
99+ $2.9191 $288.9909
133+ $2.6172 $348.0876
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,500 pieces
MOQ: 15 pcs
Order Increment : 1 pcs
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