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Same model may have multiple batches, images only for reference.
RFP25N05L Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

RFP25N05L

Part No RFP25N05L
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL, MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Rds On (Max) @ Id, Vgs 47mOhm @ 25A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V
Vgs (Max) ±10V
Power Dissipation (Max) 60W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 294087-RFP25N05L
Ultra Librarian 3D Model Ultra Librarian RFP25N05L CAD Model

Description

The RFP25N05L is an N-Channel MOSFET transistor designed for medium power applications.

  • Drain-to-Source Voltage: 50V
  • Continuous Drain Current: 25A @ 25°C
  • On-Resistance: 47mΩ @ 25A, 5V
  • Gate Threshold Voltage: 2V @ 250μA
  • Power Dissipation: 60W @ 25°C
  • Mounting: Through-Hole
  • Package: TO-220-3
  • Standard Package: 1 piece
  • Manufacturer: Harris Corporation

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