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RFP2N15

Part No RFP2N15
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL, MOSFET / N-Channel 150 V 2A (Tc) 25W (Tc) Through Hole TO-220-3
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Harris Corporation
Package Bulk
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.75Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 25 V
Power Dissipation (Max) 25W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
RoHS Status RoHS non-compliant
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Other Names HARHARRFP2N15,2156-RFP2N15
Standard Package 1
Win Source Part Number 1119268-RFP2N15
Ultra Librarian 3D Model Ultra Librarian RFP2N15 CAD Model

Description

The RFP2N15 is a N-Channel MOSFET transistor from Harris Corporation. It is designed for use in Discrete Semiconductor Products, specifically Transistors - FETs, MOSFETs - Single.

  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
  • Rds On (Max) @ Id, Vgs: 1.75Ohm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Power Dissipation: 25W (Tc)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
  • Vgs (Max): ±20V
  • Temperature Range: -55°C ~ 150°C (TJ)
  • ECCN: EAR99
  • RoHS: non-compliant

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