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RFP2P08

Name: RFP2P08
Brand: Harris Corporation
SKU: 660111
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	RFP2P08
Manufacturer	Harris Corporation
Catalog	Transistors - FETs, MOSFETs - RF
Description	P-CHANNEL POWER MOSFET
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr	Harris Corporation
Package	Bulk
Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	3.5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	150 pF @ 25 V
Power Dissipation (Max)	25W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3
Standard Package	1 pcs
MSL Level	1 (Unlimited)
REACH Status	Vendor Undefined
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	660111-RFP2P08
Ultra Librarian 3D Model	Ultra Librarian RFP2P08 CAD Model

Alternative Products

Description

The 660111-RFP2P08 is a P-channel MOSFET transistor designed for various applications manufactured by Harris Corporation.

Drain to Source Voltage: 80V
Continuous Drain Current @ 25°C: 2A
Maximum On-Resistance: 3.5Ω @ 1A and 10V gate-source voltage
Gate-Source Threshold Voltage: 4V @ 1mA
Maximum Power Dissipation: 25W
Package: TO-220-3
Mounting: through-hole
Operating Temperature: -55°C to 150°C
Status: active

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