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2SC3338

Part No 2SC3338
Manufacturer Hitachi, Ltd
Catalog OEM Parts (0 - 9)
Sample
Rohs State Need to verify
ECAD Module
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RoHS Non-Compliant
Win Source Part Number 1037042-2SC3338
Categories OEM Parts(0-9)
Manufacturer Hitachi, Ltd
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2SC3338 CAD Model

Description

The 2SC3338 is an NPN silicon epitaxial transistor manufactured by Hitachi, Ltd. This transistor is designed for high-frequency power amplification applications, particularly in VHF and UHF bands. It is commonly used in mobile radio equipment, transmitters, and other communication devices where efficient power amplification is critical.

Applications:

  • VHF/UHF Amplifiers: Used as a power amplifier in VHF (Very High Frequency) and UHF (Ultra High Frequency) communication systems.
  • Mobile Radio Equipment: Commonly found in mobile radios and transceivers for amplifying transmitted signals.
  • Transmitters: Employed in various types of transmitters to boost the output power of RF signals.
  • Oscillators: Can be used in oscillator circuits to generate high-frequency signals.
  • RF Power Amplifiers: Suitable for use in RF (Radio Frequency) power amplifiers for various applications.

Features:

  • NPN Silicon Epitaxial Transistor: Utilizes NPN silicon epitaxial technology for high performance.
  • High-Frequency Operation: Designed for efficient operation in VHF and UHF bands.
  • High Power Gain: Provides substantial power gain, enabling effective signal amplification.
  • Low Noise Figure: Offers a low noise figure, minimizing unwanted noise in amplified signals.
  • High Collector Dissipation: Capable of handling high collector dissipation, allowing for high-power operation.

Benefits:

  • Efficient Power Amplification: Provides efficient amplification of high-frequency signals, improving communication range and signal quality.
  • Reliable Performance: Offers reliable and consistent performance in demanding applications.
  • Low Distortion: Minimizes signal distortion, ensuring accurate signal transmission.
  • Compact Size: The compact design allows for easy integration into various electronic devices.
  • High Gain: The high gain characteristic reduces the need for multiple amplification stages, simplifying circuit design.

Additional Details:

The 2SC3338 typically has a collector-emitter voltage (Vceo) rating of around 16V and a collector current (Ic) rating of approximately 1.5A. The transition frequency (fT) is usually in the range of several hundred MHz to a few GHz, making it suitable for high-frequency applications. The transistor is often supplied in a small plastic package, such as a TO-92 or similar, for easy mounting on printed circuit boards. The thermal resistance of the package is an important consideration for managing heat dissipation. Proper heat sinking may be necessary to ensure reliable operation at high power levels. The 2SC3338 is commonly used in conjunction with other components, such as matching networks and biasing circuits, to optimize its performance in specific applications. It is crucial to adhere to the manufacturer's specifications and application notes to ensure safe and reliable operation.

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