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2SD1376

Part No 2SD1376
Manufacturer Hitachi, Ltd
Catalog Transistors (BJT) - Single
Description Silicon NPN Epitaxial
Sample
Rohs State rohs
ECAD Module
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Manufacturer Hitachi, Ltd
Win Source Part Number 1126203-2SD1376
Manufacturer Homepage www.renesas.com/eng
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SD1376 CAD Model

Description

The 2SD1376 is an NPN bipolar junction transistor (BJT) manufactured by Hitachi, Ltd. It is designed for use in various switching and amplification applications. This transistor is commonly used in power amplifiers, switching regulators, and general-purpose switching circuits.

Applications:

  • Power Amplifiers: Used in audio amplifiers and other power amplification stages.
  • Switching Regulators: Employed in DC-DC converters and other switching power supplies.
  • Motor Control Circuits: Used to control the speed and direction of DC motors.
  • Relay Drivers: Drives relays and other inductive loads.
  • General-Purpose Switching: Used as a switch in various electronic circuits.

Features:

  • NPN Transistor: NPN polarity for switching and amplification applications.
  • High Collector Current: Capable of handling relatively high collector current.
  • Low Saturation Voltage: Low VCE(sat) for efficient switching.
  • High fT (Transition Frequency): Suitable for high-frequency applications.
  • TO-220 Package: Package provides good thermal dissipation.
  • High Power Dissipation: Designed to handle substantial power dissipation.

Benefits:

  • Efficient Switching: Low saturation voltage minimizes power loss during switching.
  • High Gain: Provides substantial current gain for amplification applications.
  • Versatile Application: Suitable for a broad range of electronic circuits.
  • Easy to Use: The TO-220 package allows for easy mounting and heatsinking.
  • Reliable Performance: Offers stable performance over a wide range of operating conditions.
  • Improved Circuit Efficiency: By providing efficient switching and amplification, it enhances the overall efficiency of the circuit.

Additional Details:

The 2SD1376's specifications include collector-emitter voltage (VCEO), collector current (IC), and power dissipation (PD). These parameters are crucial for selecting the appropriate transistor for a specific application. Adequate heatsinking is essential to prevent overheating, especially when operating at higher collector currents. The transistor's datasheet provides detailed specifications on voltage ratings, current ratings, thermal resistance, and other relevant parameters.

This transistor is typically used with other components such as resistors and capacitors to build complete amplifier or switching circuits. The base current and collector resistor values are critical parameters that influence the transistor's performance. Careful selection of these components ensures stable operation and prevents damage to the transistor. The device's datasheet provides comprehensive information about the transistor's electrical and thermal characteristics, ensuring proper integration into electronic circuits.

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $13.1347 $65.6735
11+ $10.7773 $118.5503
17+ $10.4412 $177.5004
23+ $10.1039 $232.3897
30+ $9.7667 $293.0010
40+ $8.7572 $350.2880
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Availability: 8,900 pieces
MOQ: 5 pcs
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