The 2SJ530S is a P-Channel MOSFET transistor manufactured by Hitachi. It is designed for power switching and amplification applications.

Applications:

• DC-DC converters.
• Power inverters.
• Motor control circuits.
• Audio amplifiers.
• Load switching.

Features:

• P-Channel MOSFET.
• Low on-resistance.
• High-speed switching.
• Avalanche energy capability.
• TO-220 package.

Benefits:

• Efficient power switching.
• Minimal power loss.
• Fast switching speed.
• Robust performance.
• Easy to mount and use.

Technical Specifications:

The 2SJ530S has a drain-source voltage (VDS) of -60V. The gate-source voltage (VGS) is ±20V. The continuous drain current (ID) is -20A. The pulsed drain current (IDM) is -80A. The drain-source on-resistance (RDS(on)) is 0.12 ohms (typical). The gate threshold voltage (VGS(th)) is -2.0V to -4.0V. The total power dissipation (PD) is 80W. The operating temperature range is -55°C to +150°C. The package is TO-220.

This P-Channel MOSFET is suitable for a variety of power switching and amplification applications requiring efficient and reliable performance.