The H5MS2562NFR-E3M is a 256Mb (32M x 8) Mobile DDR SDRAM (Double Data Rate Synchronous Dynamic Random-Access Memory) manufactured by Hynix Semiconductor. This memory chip is designed for use in mobile devices and embedded systems where low power consumption and high bandwidth are critical.

Applications

• Mobile phones
• Tablets
• Portable media players
• Embedded systems
• Networking devices

Features

• Capacity: 256Mb (32M x 8)
• Organization: 32M x 8
• Interface: Mobile DDR
• Clock Frequency: Up to 200 MHz
• Data Rate: Up to 400 Mbps
• Power Supply: 1.8V
• Low Power Consumption
• Lead-Free Package

Benefits

• High bandwidth for fast data access
• Low power consumption extends battery life in mobile devices
• Compact size for space-constrained applications
• Improved system performance
• Reliable data storage

Additional Details

The H5MS2562NFR-E3M supports a clock frequency of up to 200 MHz, allowing for a data rate of up to 400 Mbps. This makes it suitable for applications that require fast data access and high bandwidth. The low power consumption of the chip is particularly important in mobile devices, where battery life is a key concern. The H5MS2562NFR-E3M is packaged in a compact FBGA (Fine-Pitch Ball Grid Array) package, which allows for high-density mounting on printed circuit boards. This memory is designed for use in systems requiring high performance and low power.

Technical Specifications:

• Capacity: 256Mb
• Organization: 32M x 8
• Interface: Mobile DDR
• Clock Frequency: 200MHz (Max)
• Data Rate: 400Mbps (Max)
• Voltage: 1.8V
• Package: FBGA