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H5TQ4G63MFR-RDC

Part No H5TQ4G63MFR-RDC
Manufacturer Hynix Semiconductor
Description 4Gb DDR3 SDRAM
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Manufacturer Hynix Semiconductor
Win Source Part Number 1178362-H5TQ4G63MFR-RDC
Manufacturer Homepage www.skhynix.com/ko/index.jsp
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian H5TQ4G63MFR-RDC CAD Model

Description

The Hynix H5TQ4G63MFR-RDC is a high-speed DDR3 SDRAM (Synchronous Dynamic Random-Access Memory) component. It is designed for applications requiring significant memory bandwidth and low latency. This particular part number indicates a specific configuration and speed grade within the H5TQ4G63MFR series.

Applications:

  • Desktop and Laptop Computers: As main system memory, providing fast data access for applications and operating systems.
  • Servers: Supporting the high memory demands of server applications.
  • Graphics Cards: Providing memory for texture mapping, frame buffering, and other graphics-intensive tasks.
  • Gaming Consoles: Delivering the memory bandwidth needed for demanding game environments.
  • Networking Equipment: Used in routers, switches, and other networking devices for packet buffering and processing.

Features:

  • DDR3 Technology: Utilizes DDR3 architecture for increased bandwidth and reduced power consumption compared to previous generations.
  • 4Gb Density: Offers a capacity of 4 Gigabits, allowing for larger memory modules.
  • High-Speed Operation: Supports data transfer rates up to a specified frequency (check datasheet for exact speed of -RDC variant).
  • 8-bit Prefetch: Improves memory efficiency by prefetching 8 bits of data per memory access.
  • Double Data Rate: Transfers data on both the rising and falling edges of the clock signal, effectively doubling the data rate.
  • On-Die Termination (ODT): Improves signal integrity and reduces reflections.

Benefits:

  • Increased System Performance: Provides faster data access and improved overall system responsiveness.
  • Reduced Power Consumption: DDR3 technology offers lower power consumption compared to DDR2, leading to longer battery life in portable devices.
  • Higher Bandwidth: Enables faster data transfer rates for demanding applications.
  • Improved Stability: ODT and other features contribute to improved signal integrity and system stability.
  • Larger Memory Capacity: 4Gb density allows for building high-capacity memory modules.

Technical Specifications (Typical):

Operating Temperature: 0°C to +85°C
Package: FBGA
Specific voltage and timing characteristics will depend on the exact speed grade and configuration (refer to the Hynix datasheet for H5TQ4G63MFR-RDC).

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