The HY5DU121622DTR-D43 is a Double Data Rate (DDR) SDRAM from Hynix Semiconductor. This memory chip is designed for applications requiring high bandwidth and low latency. It is a 128M x 16 bit DDR SDRAM, meaning it has a capacity of 256Mb. The DDR architecture achieves high-speed operation by transferring data on both the rising and falling edges of the clock signal.

Applications

• Graphics cards
• Gaming consoles
• High-performance computing
• Networking devices
• Embedded systems requiring substantial memory capacity

Features

• Double data rate architecture: Transfers data on both clock edges for increased bandwidth.
• Data rate of up to 200 MHz/400 Mbps
• 128M x 16 bit organization: Provides a total capacity of 256Mb.
• Differential clock inputs (CK and /CK): Enhance noise immunity and timing accuracy.
• DLL (Delay Locked Loop): Aligns the data output with the clock signal, improving signal integrity at high speeds.
• 8 internal banks for concurrent operation: Improves memory utilization and reduces latency.
• Programmable burst length: Allows for efficient data transfer in various application scenarios.
• Auto precharge option for simplified memory management.
• RoHS compliant: Meets environmental standards for hazardous substance restriction.

Benefits

• Increased memory bandwidth: DDR technology doubles the data transfer rate compared to standard SDRAM.
• Improved system performance: Fast memory access reduces bottlenecks and enhances overall system responsiveness.
• Reduced power consumption compared to earlier memory technologies.
• Enhanced signal integrity: Differential clock inputs and DLL contribute to reliable data transfer at high speeds.
• Simplified memory management: Auto precharge option streamlines memory operations.
• High capacity in a single chip: 256Mb density provides ample memory for demanding applications.

Technical Specifications

The HY5DU121622DTR-D43 operates with a supply voltage of 2.5V. It supports various burst lengths, including 2, 4, and 8. The operating temperature range is typically between 0°C and 70°C. Detailed timing parameters, such as clock cycle time and data access time, are specified in the Hynix datasheet.