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BUV89

Part No BUV89
Manufacturer Inchange Semiconductor Company Limited
Catalog END - OF - LIFE
Description isc Silicon NPN Power Transistor
Sample
Rohs State rohs
ECAD Module
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Manufacturer Inchange Semiconductor Company Limited
Win Source Part Number 1156374-BUV89
Manufacturer Homepage www.iscsemi.cn
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BUV89 CAD Model

Description

The BUV89 is a high-voltage NPN Bipolar Junction Transistor (BJT) produced by Inchange Semiconductor Company Limited. This transistor is designed for high-power switching applications, especially in offline converters and power supplies. Its high breakdown voltage and current handling capabilities make it suitable for demanding industrial and consumer electronic applications.

Applications:

  • Offline Converters: Used in AC-DC power supplies for converting AC voltage to DC voltage.
  • Power Supplies: Employed in various power supply designs for high-voltage switching.
  • Motor Control: Suitable for controlling high-voltage motors.
  • Lighting Systems: Used in lighting applications, such as ballast circuits for fluorescent lamps.
  • Inverters: Applied in inverter circuits for converting DC to AC voltage.

Features:

  • NPN Transistor: Standard NPN configuration.
  • High Breakdown Voltage: Capable of withstanding high voltages without breakdown.
  • High Collector Current: Can handle significant current loads.
  • Fast Switching Speed: Designed for high-frequency switching applications.
  • Low Saturation Voltage: Ensures efficient switching with minimal power loss.

Benefits:

  • Efficient Power Switching: Low saturation voltage and fast switching speed provide efficient power switching.
  • Reliable High-Voltage Operation: High breakdown voltage ensures reliable operation in high-voltage environments.
  • Versatile Application: Suitable for a wide range of high-power applications.
  • Improved System Performance: Efficient switching reduces power losses, improving overall system performance.
  • Robust Design: Designed for long-term reliability in demanding operating conditions.

Additional Details:

The BUV89 typically comes in a TO-220 or similar through-hole package designed for effective heat dissipation. Detailed specifications, including collector-emitter breakdown voltage (VCEO), collector current (IC), and saturation voltage (VCE(sat)), are available in the device's datasheet. It is crucial to ensure adequate heat sinking to keep the transistor within its safe operating temperature. The BUV89 is often selected for applications requiring a rugged and reliable high-voltage switching transistor. Always refer to the official datasheet for comprehensive specifications and application guidelines.

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