The 04P10PL is a P-channel OptiMOS™ power MOSFET from Infineon Technologies, designed for high-efficiency power conversion in a variety of applications. This MOSFET combines low on-state resistance (RDS(on)) with fast switching speeds, minimizing power losses and maximizing efficiency.

Applications:

• DC-DC converters
• Power management in servers and workstations
• Synchronous rectification
• Motor control applications
• Battery management systems

Features:

• P-Channel MOSFET
• Low RDS(on) for reduced conduction losses
• Fast switching speed for high-frequency operation
• Logic level drive capability
• Avalanche rated
• Pb-free lead finish; RoHS compliant

Benefits:

• High efficiency reduces energy consumption and heat generation.
• Improved power density enables smaller and lighter designs.
• Simplified gate drive circuitry reduces system cost.
• Robust performance in demanding applications.
• Environmentally friendly due to Pb-free and RoHS compliance.

Technical Specifications:

Transistor Type: P-Channel

Drain-Source Voltage (VDS): -100 V

Gate-Source Voltage (VGS): ±20 V

Continuous Drain Current (ID): -4 A

On-State Resistance (RDS(on)): 0.1 Ohms @ VGS=-10V

Gate Threshold Voltage (VGS(th)): -2.0V

Total Gate Charge (Qg): 6 nC

Operating Temperature Range: -55°C to +175°C

Package: PG-TSDSON-8