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054NE8N

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Part No	054NE8N
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 85V 100A TO-220
Datasheet	054NE8N Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Tube/Rail
Status	Obsolete(EOL)
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	85V
Continuous Drain Current at 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Gate-Source Threshold Voltage	4V @ 250μA
Max Gate Charge	180nC @ 10V
Max Input Capacitance	12100pF @ 40V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	300W (Tc)
Maximum Rds On at Id,Vgs	5.4 mOhm @ 100A, 10V
Temperature Range - Operating	-55°C to 175°C (TJ)
Mounting	Through Hole
Case / Package	PG-TO-220-3
Dimension	TO-220-3
Win Source Part Number	074871-054NE8N
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian 054NE8N CAD Model

Alternative Products

Description

054NE8N: Efficient Power Management Component

Designed for efficiency, the 054NE8N component is perfect for applications that demand high efficiency in power management.

Applications/Projects:
- Renewable Energy Systems
- Portable Devices
- Electric Vehicles
Features & Benefits:
- Optimized for reduced energy loss
- Flexible integration options
- Eco-friendly design
Additional Details:
The 054NE8N is built to support sustainable technology by improving energy efficiency in an array of electronic systems.

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