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Same model may have multiple batches, images only for reference.
47N60C3 Real Image
Same model may have multiple batches, images only for reference.

47N60C3

Part No 47N60C3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 47A TO-247
Datasheet
47N60C3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 2.7mA
Max Gate Charge 320nC @ 10V
Max Input Capacitance 6800pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 415W (Tc)
Maximum Rds On at Id,Vgs 70 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Dimension TO-247-3
Win Source Part Number 075820-47N60C3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 47N60C3 CAD Model

Description

Product Description

The 47N60C3 is a robust, high-performance N-channel MOSFET designed for efficient power management in various electronic circuits. With its state-of-the-art construction, this component offers low on-resistance and fast switching capabilities, making it ideal for high-speed applications.
  • Applications:
    • Switch mode power supplies (SMPS)
    • DC-DC converters
    • Motor controls
    • Battery-powered systems
  • Features and Benefits:
    • High energy efficiency with reduced switching losses
    • Enhanced thermal performance
    • Reliable under both high voltage and high current conditions
  • Additional Details: This MOSFET offers excellent load regulation and is suitable for both continuous and switching operations in demanding environments.

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