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Same model may have multiple batches, images only for reference.
AUIRF1010Z Real Image
Same model may have multiple batches, images only for reference.

AUIRF1010Z

Part No AUIRF1010Z
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 75A TO220AB
Datasheet
AUIRF1010Z Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 75A (Tc)
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 95nC @ 10V
Max Input Capacitance 2840pF @ 25V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 7.5 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1020695-AUIRF1010Z
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian AUIRF1010Z CAD Model

Description

The Infineon Technologies AUIRF1010Z is an N-channel MOSFET transistor.

  • Application: Discrete Semiconductor Products
  • Case/Package: TO-220AB
  • Power Dissipation: 140W
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current @ 25°C: 75A
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 95nC @ 10V
  • Maximum Input Capacitance: 2840pF @ 25V
  • Maximum Rds On: 7.5 mOhm @ 75A, 10V
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $8.1250 $56.8750
15+ $6.6667 $100.0005
24+ $6.4583 $154.9992
32+ $6.2500 $200.0000
42+ $6.0417 $253.7514
56+ $5.4167 $303.3352
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 280 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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