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Same model may have multiple batches, images only for reference.
AUIRF1405ZS Real Image
Same model may have multiple batches, images only for reference.

AUIRF1405ZS

Part No AUIRF1405ZS
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description AUIRF1405 - 55V-60V N-CHANNEL AU
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series HEXFET®
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.9mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4780 pF @ 25 V
Power Dissipation (Max) 230W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Standard Package 1 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 567085-AUIRF1405ZS
Ultra Librarian 3D Model Ultra Librarian AUIRF1405ZS CAD Model

Description

The AUIRF1405ZS is a N-Channel MOSFET transistor from the HEXFET series manufactured by Infineon Technologies.

  • Channel Type: N-Channel
  • Series: HEXFET
  • Vdss (Drain to Source Voltage): 55V
  • Id (Continuous Drain Current): 150A
  • Rds On (On-Resistance): 4.9mOhm @ 75A, 10V
  • Vgs(th) (Gate-Source Voltage Threshold): 4V @ 250µA
  • Power Dissipation: 230W
  • Mounting Type: Surface Mount
  • Package: TO-263-3

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $5.6306 $61.9366
25+ $4.6200 $115.5000
39+ $4.4756 $174.5484
54+ $4.3313 $233.8902
69+ $4.1869 $288.8961
93+ $3.7538 $349.1034
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Availability: 8,882 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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