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Same model may have multiple batches, images only for reference.
AUIRF2804WL Real Image
Same model may have multiple batches, images only for reference.

AUIRF2804WL

Part No AUIRF2804WL
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 240A TO262-3
Datasheet
AUIRF2804WL Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series HEXFET®
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 240A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.8mOhm @ 187A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 225 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7978 pF @ 25 V
Power Dissipation (Max) 300W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-262-3 Wide
Package / Case TO-262-3 Wide Leads
Base Product Number AUIRF2804
Standard Package 1,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 567089-AUIRF2804WL
Ultra Librarian 3D Model Ultra Librarian AUIRF2804WL CAD Model

Description

The AUIRF2804WL is a N-Channel MOSFET transistor from Infineon Technologies.

  • Series: HEXFET series
  • Application: designed for use in discrete semiconductor products.
  • Vdss: 40 V
  • Id @ 25°C: 240A
  • Rds On @ 187A and 10V: 1.8mOhm
  • Vgs(th) @ 250μA: 4V
  • Power Dissipation: 300W
  • Mounting Type: through-hole
  • Package: TO-262-3 Wide Leads
  • Qg @ 10V: 225 nC
  • Ciss @ 25V: 7978 pF
  • Temperature Range: -55°C to 175°C (TJ)
  • ECCN: EAR99

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154+ $2.2529 $346.9466
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