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Same model may have multiple batches, images only for reference.
AUIRF6215S Real Image
Same model may have multiple batches, images only for reference.

AUIRF6215S

Part No AUIRF6215S
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 150V 13A D2PAK
Datasheet
AUIRF6215S Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series HEXFET®
Package Tube
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 290mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 66 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 860 pF @ 25 V
Power Dissipation (Max) 3.8W (Ta), 110W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Standard Package 1,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 567112-AUIRF6215S
Ultra Librarian 3D Model Ultra Librarian AUIRF6215S CAD Model

Description

The AUIRF6215S is a P-Channel MOSFET transistor designed for various applications.

  • Drain to Source Voltage (Vdss): 150V
  • Continuous Drain Current (Id): 13A @ 25°C
  • On-Resistance (Rds On): 290mOhm @ 6.6A and 10V
  • Gate-Source Threshold Voltage (Vgs(th)): 4V @ 250μA
  • Maximum Power Dissipation: 3.8W (Ta) and 110W (Tc)
  • Mounting Type: Surface Mount
  • Package: TO-263-3

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $40.9090 $81.8180
3+ $33.5664 $100.6992
5+ $32.5175 $162.5875
7+ $31.4685 $220.2795
9+ $30.4196 $273.7764
12+ $27.2727 $327.2724
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