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AUIRF7379Q

Part No AUIRF7379Q
Manufacturer Infineon Technologies
Catalog FETs - Arrays
Description MOSFET N/P-CH 30V 5.8A 8SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Infineon Technologies
Series HEXFET®
Package Tube
Product Status Obsolete
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 5.8A, 4.3A
Rds On (Max) @ Id, Vgs 45mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 520pF @ 25V
Power - Max 2.5W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
Base Product Number AUIRF7379
Standard Package 95 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 567118-AUIRF7379Q
Ultra Librarian 3D Model Ultra Librarian AUIRF7379Q CAD Model

Description

The AUIRF7379Q is a logic level gate N and P-channel MOSFET array designed for general purpose applications.

  • Product Name: AUIRF7379Q
  • Type: logic level gate N and P-channel MOSFET array
  • Application: general purpose applications
  • Drain to Source Voltage: 30V
  • Continuous Drain Current (N-channel): 5.8A
  • Continuous Drain Current (P-channel): 4.3A
  • On-Resistance (N-channel): 45mOhm @ 10V
  • On-Resistance (P-channel): 10mOhm @ 10V
  • Package: 8-SOIC
  • Gate Charge: 25nC
  • Input Capacitance: 520pF
  • Manufacturer: Infineon Technologies
  • Status: obsolete

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.6320 $65.2800
90+ $1.3398 $120.5820
135+ $1.2982 $175.2570
185+ $1.2555 $232.2675
240+ $1.2139 $291.3360
320+ $1.0880 $348.1600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,000 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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