The AUIRF7478Q is a single N-channel MOSFET from the HEXFET® series.

• GPTDescription: It is a discrete semiconductor product widely used in electronic circuits for switching and amplification purposes.
• GPTDescription: The AUIRF7478Q is designed for a drain-to-source voltage (Vdss) of 60V and can handle a continuous drain current (Id) of 7A @ 25°C.
• GPTDescription: With a maximum on-resistance (Rds On) of 26mOhm, this MOSFET offers low power dissipation and efficient performance.
• GPTDescription: It has a gate threshold voltage (Vgs(th)) of 3V and a gate charge (Qg) of 31nC.
• GPTDescription: The AUIRF7478Q operates in a wide temperature range of -55°C to 150°C, making it suitable for various industrial and automotive applications.
• GPTDescription: With its compact 8-SOIC package, this MOSFET can be easily integrated into electronic circuits.