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Same model may have multiple batches, images only for reference.
AUIRFR2405TRL Real Image
Same model may have multiple batches, images only for reference.

AUIRFR2405TRL

Part No AUIRFR2405TRL
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description AUIRFR2405 - MOSFET N-CHANNEL SI
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series HEXFET®
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Rds On (Max) @ Id, Vgs 16mOhm @ 34A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 2430 pF @ 25 V
Power Dissipation (Max) 110W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-PAK (TO-252AA)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Standard Package 1 pcs
Moisture Sensitivity Level (MSL) Vendor Undefined
REACH Status REACH Unaffected
Win Source Part Number 567138-AUIRFR2405TRL
Ultra Librarian 3D Model Ultra Librarian AUIRFR2405TRL CAD Model

Description

The AUIRFR2405TRL is a HEXFET N-channel MOSFET transistor.

  • Application: Discrete Semiconductor
  • Vdss: 55V
  • Id @ 25°C: 30A
  • Rds On: 16mOhm @ 34A and 10V
  • Vgs(th): 4V @ 250µA
  • Power Dissipation: 110W @ a temperature range of -55°C to 175°C (TJ)
  • Package: TO-252-3, DPak
  • Supplier Device Package: D-PAK (TO-252AA)
  • Qg @ maximum Vgs: 110nC @ 10V
  • Ciss @ maximum Vds: 2430pF @ 25V
  • Product Status: Active
  • Manufacturer: Infineon Technologies

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