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Same model may have multiple batches, images only for reference.
AUIRFR2607Z International Rectifier
Same model may have multiple batches, images only for reference.

AUIRFR2607Z

Part No AUIRFR2607Z
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description AUTOMOTIVE POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series HEXFET®
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V
Current - Continuous Drain (Id) @ 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 22mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 51 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1440 pF @ 25 V
Power Dissipation (Max) 110W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Standard Package 451 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 0000.00.0000
Win Source Part Number 567140-AUIRFR2607Z
Ultra Librarian 3D Model Ultra Librarian AUIRFR2607Z CAD Model

Description

The AUIRFR2607Z is an N-Channel MOSFET transistor from Infineon Technologies.

  • Series: HEXFET series
  • Application: discrete semiconductor products, specifically in transistors and FETs.
  • Vdss: 75V
  • Id @ 25°C: 42A
  • Rds On @ 30A and 10V: 22mOhm
  • Power Dissipation: up to 110W.
  • Mounting Type: surface mountable
  • Package: TO-252-3, DPak
  • Qg @ 10V: 51nC
  • Ciss @ 25V: 1440pF
  • Operating Temperature: -55°C to 175°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $6.7233 $60.5097
21+ $5.5174 $115.8654
33+ $5.3442 $176.3586
45+ $5.1721 $232.7445
58+ $5.0000 $290.0000
78+ $4.4826 $349.6428
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Availability: 2,000 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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