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Same model may have multiple batches, images only for reference.
AUIRFR5505 International Rectifier
Same model may have multiple batches, images only for reference.

AUIRFR5505

Part No AUIRFR5505
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 55V 18A DPAK
Datasheet
AUIRFR5505 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series HEXFET®
Package Tube
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 650 pF @ 25 V
Power Dissipation (Max) 57W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 567158-AUIRFR5505
Ultra Librarian 3D Model Ultra Librarian AUIRFR5505 CAD Model

Description

The AUIRFR5505 is a P-Channel MOSFET transistor from Infineon Technologies.

  • Series: HEXFET
  • Drain-to-Source Voltage: 55V
  • Continuous Drain Current: 18A @ 25°C
  • Rds On: 110mOhm @ 9.6A and 10V
  • Gate Threshold Voltage: 4V @ 250μA
  • Maximum Power Dissipation: 57W
  • Mounting Type: Surface mount
  • Package: TO-252-3, DPak

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