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AUIRFS3206

Part No AUIRFS3206
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 210A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 150μA
Max Gate Charge 170nC @ 10V
Max Input Capacitance 6540pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 3 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1020769-AUIRFS3206
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian AUIRFS3206 CAD Model

Description

Infineon Technologies introduces the AUIRFS3206 MOSFET, an N-Channel polarity product with a drain-source breakdown voltage of 60V.

  • Continuous Drain Current: 120A (Tc)
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 3 mOhm @ 75A, 10V
  • Gate-Source Threshold Voltage: 4V @ 150μA
  • Maximum Gate Charge: 170nC @ 10V
  • Maximum Input Capacitance: 6540pF @ 50V
  • Category: Discrete Semiconductor Products
  • Popularity: Medium
  • Supply and Demand Status: Limited
  • Operating Temperature Range: -55°C to 175°C (TJ)

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