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Same model may have multiple batches, images only for reference.
AUIRFZ44Z Real Image
Same model may have multiple batches, images only for reference.

AUIRFZ44Z

Part No AUIRFZ44Z
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 51A TO220AB
Datasheet
AUIRFZ44Z Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 43nC @ 10V
Max Input Capacitance 1420pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 80W (Tc)
Maximum Rds On at Id,Vgs 13.9 mOhm @ 31A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 1020789-AUIRFZ44Z
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian AUIRFZ44Z CAD Model

Description

The Infineon Technologies MOSFET is designed for use in various applications.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current @ 25°C: 51A
  • Maximum Rds on @ Id, Vgs: 13.9 mOhm @ 31A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Input Capacitance: 1420pF @ 25V
  • Maximum Gate Charge: 43nC @ 10V
  • Package: TO-220-3
  • Mounting Type: Through-hole
  • Power Dissipation: 80W (Tc)
  • Temperature Range: -55°C to 175°C (TJ)

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